Journal Articles

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Nano Convergence


A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p-type ternary logic switching characteristics exhibiting zero differential conductance in the intermediate current state are demonstrated. The stability of the DNTT stack-channel ternary logic switch device is confirmed by implementing a resistive-load ternary logic inverter circuit.


Organic semiconductor, Photolithography, Ternary logic, Stack-channel, Zero differential conductance

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